Published May 2008 | Version v1
Journal article Metadata-only

Ballistic electron attenuation length in titanylphthalocyanine films grown on GaAs

Creators

  • 1. Institut für Festkörperelektronik, TU-Wien, A-1040 Wien (Austria)
  • 2. Institut für angewandte Photophysik, TU-Dresden, D-01062 Dresden (Germany)

Description

In this work we present an experimental investigation of hot electron transport in thin titanylphthalocyanine films grown on GaAs. Ballistic electron emission microscopy/spectroscopy is used as the experimental method. The transmission through a Au/titanylphthalocyanine/GaAs heterostructure is evaluated. In addition, an approach to calculate the attenuation length in titanylphthalocyanine is presented

Availability note (English)

Available from http://dx.doi.org/10.1088/0268-1242/23/5/055008

Additional details

Identifiers

DOI
10.1088/0268-1242/23/5/055008;
PII
S0268-1242(08)71559-1;

Publishing Information

Journal Title
Semiconductor Science and Technology
Journal Volume
23
Journal Issue
5
Journal Page Range
[4 p.]
ISSN
0268-1242
CODEN
SSTEET

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44083763
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ATTENUATION; CHARGED-PARTICLE TRANSPORT; ELECTRON EMISSION; GALLIUM ARSENIDES; MICROSCOPY; SPECTROSCOPY; THIN FILMS; TRANSMISSION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; EMISSION; FILMS; GALLIUM COMPOUNDS; PNICTIDES; RADIATION TRANSPORT