Published November 1, 2011
| Version v1
Journal article
Publisher's Note: ''Azimuthal reflection high-energy electron diffraction study of MnAs growth on GaAs(001) by molecular beam epitaxy'' [J. Appl. Phys. 110, 023505 (2011)]
- 1. Paul-Drude-Institut fuer Festkoerperelektronik, Hausvogteiplatz 5-7, Berlin D-10117 (Germany)
Description
no abstract available
Additional details
Identifiers
- DOI
- 10.1063/1.3659731;
Publishing Information
- Journal Title
- Journal of Applied Physics
- Journal Volume
- 110
- Journal Issue
- 9
- Journal Page Range
- p. 099901-099901.1
- ISSN
- 0021-8979
- CODEN
- JAPIAU
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 43129149
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract
- Descriptors DEI
- CRYSTAL GROWTH; CRYSTAL STRUCTURE; ELECTRON DIFFRACTION; GALLIUM ARSENIDES; LAYERS; MANGANESE ARSENIDES; MOLECULAR BEAM EPITAXY; REFLECTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; DIFFRACTION; EPITAXY; GALLIUM COMPOUNDS; MANGANESE COMPOUNDS; PNICTIDES; SCATTERING; TRANSITION ELEMENT COMPOUNDS
Optional Information
- Notes
- (c) 2011 American Institute of Physics