Influence of annealing medium on boron redistribution implantated to silicon

Mathematical simulation and experiments were used to study the effect of annealing medium on the diffusion of ion-implanted boron in plates (100) and (111) Si. The profiles of addition distribution after thermal treatment in various media (inert, dry oxygen, water vapor) can be correctly simulated using one and the same concentration dependence of diffusion coefficient. It is found that boron diffusion rates during annealing in the inert medium, dry oxygen, water vapor have the ratio 0.5:1:2 for (100) Si and 0.3:0.6:0.9 for (111) Si, respectively. The presence of thermal silicon dioxide (up to 0.35 μm thick) on the surface of film plate through which the implantation was carried out, practically does not affect the nature of diffusion acceleration during oxidation