Published 2004
| Version v1
Miscellaneous
MOVPE growth of Si delta doped InxGa1-xAs/GaAs sintered quantum wells
Creators
- 1. Faculty of Microsystem Electronics and Photonics, Wroclaw University of Technology, Wroclaw (Poland)
- 2. Institute of Physics, Wroclaw University of Technology, Wroclaw (Poland)
- 3. Department of Microelectronics, Faculty of Electrical Engineering and Information Technology, Slovak University of Technology, Bratislava (Slovakia)
Description
no abstract available
Additional details
Publishing Information
- Imprint Title
- Abstracts book of 8. Electron Technology Conference ELTE 2004
- Imprint Pagination
- 502 p.
- Journal Page Range
- p. 150-151
Conference
- Title
- 8. Electron Technology Conference ELTE 2004
- Dates
- 19-22 Apr 2004
- Place
- Stare Jablonki (Poland)
INIS
- Country of Publication
- Poland
- Country of Input or Organization
- Poland
- INIS RN
- 37004018
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- No Abstract, Conference, Non-conventional Literature
- Descriptors DEI
- ARSENIDES; CAPACITANCE; DOPED MATERIALS; GALLIUM ARSENIDES; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; ORGANOMETALLIC COMPOUNDS; PHOTOCURRENTS; QUANTUM WELLS; SILICON; SPECTRAL REFLECTANCE; STARK EFFECT; VAPOR PHASE EPITAXY; X-RAY DIFFRACTION
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; COHERENT SCATTERING; CRYSTAL GROWTH METHODS; CURRENTS; DIFFRACTION; ELECTRIC CURRENTS; ELECTRICAL PROPERTIES; ELEMENTS; EPITAXY; GALLIUM COMPOUNDS; MATERIALS; NANOSTRUCTURES; OPTICAL PROPERTIES; ORGANIC COMPOUNDS; PHYSICAL PROPERTIES; PNICTIDES; SCATTERING; SEMIMETALS
Optional Information
- Contract/Grant/Project number
- KBN grant no. 4T11B 035 25
- Notes
- 5 refs, 3 figs