Published August 20, 1985
| Version v1
Patent
Superconductive tunneling junction resistor and method of fabrication
Creators
Description
A superconductive junction device for fabricating Josephson integrated circuits is useful for replacing deposited thin-film resistors. Derived by ''poisoning'' a superconductive electrode of the Josephson junction, the device displays controllable resistive properties at normal superconducting transition temperatures at substantial savings in the space occupied. Methods of fabricating the device using the selective niobium anodization process and conventional lead alloy processes are disclosed. When both upper and lower superconductive electrodes are poisoned, the device has linear properties whose resistance is identical to the normal resistance of unpoisoned junctions
Availability note (English)
U.S. Commissioner of Patents, Washington, D.C. 20231, USA, $.50.Additional details
Publishing Information
- Imprint Pagination
- v p.
- IPC:
- Int. Cl. H01L 39/12; H01L 39/22.
- IPC
- Int. Cl. H01L 39/12; H01L 39/22.
- Patent number
- US patent document 4,536,780/A/
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 17038110
- Subject category
- S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS; S42: ENGINEERING;
- Resource subtype / Literary indicator
- Non-conventional Literature
- Descriptors DEI
- ANODIZATION; DEPOSITION; ELECTRICAL PROPERTIES; ELECTRODES; FABRICATION; INTEGRATED CIRCUITS; JOSEPHSON JUNCTIONS; LEAD ALLOYS; NIOBIUM; PHOTORESISTORS; SILICON OXIDES; SUBSTRATES; THIN FILMS; TRANSITION TEMPERATURE
- Descriptors DEC
- ALLOYS; CHALCOGENIDES; CHEMICAL COATING; CORROSION PROTECTION; ELECTRICAL EQUIPMENT; ELECTROCHEMICAL COATING; ELECTROLYSIS; ELECTRONIC CIRCUITS; ELEMENTS; EQUIPMENT; FILMS; METALS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; RESISTORS; SEMICONDUCTOR JUNCTIONS; SILICON COMPOUNDS; SURFACE COATING; THERMODYNAMIC PROPERTIES; TRANSITION ELEMENTS
Optional Information
- Notes
- PAT-APPL-468603.