Fabrication of RuO2 thin films by ion beam sputtering

An ion source has been fabricated and its discharging characteristics have been investigated. Pure argon was used as the discharging gas. The discharge voltage of this ion source did not depend on the discharge current and showed a constant value of 300V. The energy of ion beam and the ion current flowing between the cathode and the target increased when the acceleration voltage increased and/or the pressure of argon gas decreased. RuO2 thin films were fabricated by ion beam sputtering with the ion source. The resistivities of the sputered RuO2 films were in the order of 10-3 ohm-cm. The temperature dependence of the resistivies of the RuO2 films were measured in the temperature range of -1000C to 800C. (author)