Published May 1, 2013 | Version v1
Journal article Metadata-only

The misfit dislocation density profile in graded SiGe/Si(001) layers prepared at different temperatures

Creators

  • 1. Faculty of Mathematics and Physics, Department of Condensed Matter Physics, Charles University in Prague, Ke Karlovu 5, 121 16 Prague (Czech Republic)
  • 2. Institute of Semiconductor and Solid State Physics, Johannes Kepler University, Altenberger Straße 69, A-4040 Linz (Austria)

Description

We present a generalization of the Dodson–Tsao kinematic model of misfit dislocation for graded SixGe1−x/Si(001) layers. The layers were prepared under different growing conditions (temperature). The misfit dislocation distribution has been determined by means of high-resolution x-ray scattering. Analysis of the reciprocal space maps was compared with the kinematic Dodson–Tsao model and the equilibrium Tersoff model. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/25/17/175802

Additional details

Identifiers

DOI
10.1088/0953-8984/25/17/175802;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
25
Journal Issue
17
Journal Page Range
[7 p.]
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
44057557
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
DENSITY; DISLOCATIONS; DISTRIBUTION; EQUILIBRIUM; GERMANIUM SILICIDES; LAYERS; RESOLUTION; SILICON; X-RAY DIFFRACTION
Descriptors DEC
COHERENT SCATTERING; CRYSTAL DEFECTS; CRYSTAL STRUCTURE; DIFFRACTION; ELEMENTS; GERMANIUM COMPOUNDS; LINE DEFECTS; PHYSICAL PROPERTIES; SCATTERING; SEMIMETALS; SILICIDES; SILICON COMPOUNDS