Anomalous scattering of electrons in n-Si crystals irradiated with protons

The aim of this study was to gain insight into the effect of irradiation with 25-MeV protons on the Hall mobility of electrons in n-Si crystals. Irradiated crystals with an initial electron concentration 6 x 1013 cm-3 were studied using the Hall method in the range of temperatures 77-300 K. The studies showed that, in crystals irradiated with the proton dose Φ = 8.1 x 1012 cm-2, the effective mobility of conduction electrons μeff increases drastically. This effect is direct evidence that inclusions with relatively high conductivity and with nonrectifying junction at interfaces with semiconductor matrix are predominantly formed in n-Si crystals under these conditions. Agglomerations of interstitial atoms or their associations can represent such inclusions.