Published October 12, 1985
| Version v1
Journal article
Regularities of growth, chemical and phase composition and electrical properties in intrinsic oxide-semiconductor system
Description
Methods of emissive spectral analysis were used to investigate layer growth of own oxide (CO)of 70-2500 A thickness on the surface of n-InSb, n-InAs and n-InP semiconductors. Volt-Faraday and Volt-Ampere charaiteristics of MDP-structures with top aluminium electrode were recorded. It is established that the highest rate of effective charge growth in oxide is inherent in the initial stage of CO layer growth, rate of charge increase differing for opposte semiconductor faces. Content of the second element (Sb, As, P) correlates with the value of effective charge in CO. It is found-that oxide film contains different structural modifications
Additional details
Additional titles
- Original title (Russian)
- Некоторые закономерности роста, элементно-фазового состава и элекрофизических свойств систем собственный оксид-полупроводник
Publishing Information
- Journal Title
- Pis'ma Zh. Tekh. Fiz.
- Journal Volume
- 11
- Journal Issue
- 9
- Series
- Pis'ma Zh. Tekh. Fiz.
- Journal Page Range
- 1208-1213
- CODEN
- PZTFD
INIS
- Country of Publication
- USSR
- Country of Input or Organization
- USSR
- INIS RN
- 18001436
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANODIZATION; ANTIMONIDES; ARSENIDES; CHARGE DENSITY; ELECTRIC CONDUCTIVITY; FILMS; INDIUM COMPOUNDS; N-TYPE CONDUCTORS; OXIDES; PHASE STUDIES; PHOSPHIDES; SEMICONDUCTOR JUNCTIONS
- Descriptors DEC
- ANTIMONY COMPOUNDS; ARSENIC COMPOUNDS; CHALCOGENIDES; CHEMICAL COATING; CORROSION PROTECTION; DEPOSITION; ELECTRICAL PROPERTIES; ELECTROCHEMICAL COATING; ELECTROLYSIS; MATERIALS; OXYGEN COMPOUNDS; PHOSPHORUS COMPOUNDS; PHYSICAL PROPERTIES; SEMICONDUCTOR MATERIALS; SURFACE COATING
Optional Information
- Notes
- For English translation see the journal Soviet Technical Physics Letters (USA).