Calculation of point defect sink strengths in binary and ternary substitutional alloys

Analytical expressions for the stationary component profiles of binary and ternary substitutional alloys in the vicinity of point defect sinks under irradiation are derived. It is shown, that the slowest component must be segregated at the sinks, but the two other components must migrate away from the sinks in ternary alloys with vacancy mechanism of radiation-induced segregation. The segregation-induced biases of different kinds of sinks are calculated by means of spatial component distributions obtained. 9 refs.; 3 figs.; 1 tab. (author)