Published July 1998 | Version v1
Journal article Metadata-only

Behavior of irradiation donor (ID) after annealing in neutron transmutation doping Czochralski grown silicon

Creators

  • 1. Hebei Univ. of Technology, Tianjin (China). Material Research Inst.
  • 2. Huazhong Normal Univ., Wuhan (China)

Description

Behavior of the irradiation donor (ID) after annealing in NTD CZSi has been studied by using various kinds of experimental means and the effect of neutron doses and oxygen concentration on the formation of ID is discussed. the donor plateau generated in heat treatment below 750 degree C is reported for the first time. The results show that ID produces a shallow donor energy level (∼43 MeV) in the forbidden band. Its electric activity originates from the interface state of Si/SiO2 precipitate and its structure is metastable complex which consists of irradiation defects, silicon, silicon dioxide and carbon

Additional details

Publishing Information

Journal Title
Nuclear Techniques
Journal Volume
21
Journal Issue
7
Journal Page Range
p. 392-396
ISSN
0253-3219

INIS

Country of Publication
China
Country of Input or Organization
China
INIS RN
29049957
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; BINDING ENERGY; COMPLEXES; CRYSTAL DOPING; CZOCHRALSKI METHOD; ELECTRONS; ENERGY LEVELS; INTERFACES; NEUTRON FLUENCE; OXYGEN; PHYSICAL RADIATION EFFECTS; SILICON; TEMPERATURE DEPENDENCE; TRANSMUTATION; VALENCE
Descriptors DEC
CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; ELEMENTS; ENERGY; FERMIONS; HEAT TREATMENTS; LEPTONS; NONMETALS; RADIATION EFFECTS; SEMIMETALS