Published August 2009 | Version v1
Journal article

Photoluminescence of ZnO infiltrated into a three-dimensional photonic crystal

  • 1. Russian Academy of Sciences, Institute of Microelectronic Technology and Ultra-High-Purity Materials (Russian Federation)
  • 2. Russian Academy of Sciences, Institute of Solid State Physics (Russian Federation)

Description

The effect of the photonic band gap (stopband) of the photonic crystal, the synthesized SiO2 opal with embedded zinc oxide, on its luminescence in the violet spectral region is studied. It is shown that the position of the photonic band gap in the luminescence and reflectance spectra of the infiltrated opal depends on the diameter of the constituent nanoglobules, the volume fraction of zinc oxide, and on the signal's acceptance angle. It is found that, for the ZnO-opal nanocomposites, the emission intensity is decreased and the luminescence decay time is increased in the spatial directions, in which the photonic band gap coincides in spectral position with the luminescence peak of zinc oxide. The change in the decay time can be attributed to the change in the local density of photonic states in the photonic band gap.

Additional details

Identifiers

Publishing Information

Journal Title
Semiconductors
Journal Volume
43
Journal Issue
8
Journal Page Range
p. 1017-1022
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
41011142
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
COMPOSITE MATERIALS; CRYSTALS; NANOSTRUCTURES; OPALS; PHOTOLUMINESCENCE; SILICON OXIDES; SPECTRA; ZINC OXIDES
Descriptors DEC
CHALCOGENIDES; EMISSION; LUMINESCENCE; MATERIALS; MINERALS; OXIDE MINERALS; OXIDES; OXYGEN COMPOUNDS; PHOTON EMISSION; SILICA; SILICON COMPOUNDS; ZINC COMPOUNDS

Optional Information

Copyright
Copyright (c) 2009 Pleiades Publishing, Ltd.