Published April 1999 | Version v1
Journal article Metadata-only

Defects in a-Si:H films induced by Si ion implantation

Creators

  • 1. A.F. Ioffe Physicotechnical Institute, Russian Academy of Sciences, 194021 St. Petersburg (Russian Federation)

Description

Undoped a-Si:H films implanted with silicon ions (dose 1012-1014 cm-2, mean energy ε=60 keV) at room temperature have been studied. The following results of the interaction of such films with ion beams have been established: formation of defects (dangling Si-Si bonds) in the neutral state (D0), change in the charge state D0→D-, the a-Si:H→a-Si transition, and growth of inhomogeneity of the structure. It is shown that these effects depend on the initial structures and electronic characteristics of the films

Additional details

Identifiers

DOI
10.1134/1.1187896;
PII
S1063-7826(99)01704-4;

Publishing Information

Journal Title
Semiconductors
Journal Volume
33
Journal Issue
4
Journal Page Range
p. 447-450
ISSN
1063-7826
CODEN
SMICES

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
35051829
Subject category
S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Numerical Data, Translation
Descriptors DEI
CRYSTAL DEFECTS; CRYSTAL DOPING; ELECTRIC CONDUCTIVITY; ELECTRONIC STRUCTURE; EXPERIMENTAL DATA; FILMS; ION BEAMS; ION IMPLANTATION; KEV RANGE 10-100; PHYSICAL RADIATION EFFECTS; SEMICONDUCTOR MATERIALS; SILANES; SILICON IONS; TEMPERATURE RANGE 0273-0400 K; THEORETICAL DATA
Descriptors DEC
BEAMS; CHARGED PARTICLES; CRYSTAL STRUCTURE; DATA; ELECTRICAL PROPERTIES; ENERGY RANGE; HYDRIDES; HYDROGEN COMPOUNDS; INFORMATION; IONS; KEV RANGE; MATERIALS; NUMERICAL DATA; ORGANIC COMPOUNDS; ORGANIC SILICON COMPOUNDS; PHYSICAL PROPERTIES; RADIATION EFFECTS; SILICON COMPOUNDS; TEMPERATURE RANGE

Optional Information

Notes
Translated from Fizika i Tekhnika Poluprovodnikov, ISSN 0015-3222, 33, 464-468 (April 1999); (c) 1999 American Institute of Physics.