Published 2000
| Version v1
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Capacitance-voltage profiling and deep level transient spectroscopy on epitaxially-grown Si, SiGe, SiC, SiGeC heterostructures
- 1. Institut fuer Halbleiter- und Festkoerperphysik, Johannes Kepler Universitaet Linz, A-4040 Linz (Austria)
- 2. Institut fuer Analytische Chemie, Getreidemarkt 9/151, A-1060 Wien (Austria)
Description
no abstract available
Files
32045019.pdf
Files
(27.9 kB)
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Additional details
Additional titles
- Original title (English)
- 50. Jahrestagung der Oesterreichischen Physikalischen Gesellschaft
Publishing Information
- Publisher
- Oesterreichische Physikalische Gesellschaft
- Imprint Place
- Graz (Austria)
- Imprint Title
- 50. Annual symposium of the Austrian Physical Society
- Imprint Pagination
- 257 p.
- Journal Page Range
- p. 153
- Report number
- INIS-AT--0020
Conference
- Title
- 50. Annual symposium of the Austrian Physical Society
- Original Conference Title
- 50. Jahrestagung der Oesterreichischen Physikalischen Gesellschaft
- Dates
- 25-29 Sep 2000
- Place
- Graz (Austria)
INIS
- Country of Publication
- Austria
- Country of Input or Organization
- Austria
- INIS RN
- 32045019
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- CRYSTAL STRUCTURE; FILMS; GERMANIUM CARBIDES; MOLECULAR BEAM EPITAXY; PHYSICAL PROPERTIES; SILICON; SILICON CARBIDES; SILICON COMPOUNDS; SPECTROSCOPY
- Descriptors DEC
- CARBIDES; CARBON COMPOUNDS; CRYSTAL GROWTH METHODS; ELEMENTS; EPITAXY; GERMANIUM COMPOUNDS; SEMIMETALS; SILICON COMPOUNDS
Optional Information
- Notes
- Imprint:50. Jahrestagung der Oesterreichischen Physikalischen Gesellschaft