Published March 10, 2009 | Version v1
Journal article

Advanced Surface Polishing For Accelerator Technology Using Ion Beams

  • 1. Argonne National Laboratory, 9700 South Cass Avenue, Argonne, IL 60439 (United States)
  • 2. Purdue University, 400 Central Drive, West Lafayette, IN 47907 (United States)
  • 3. Thomas Jefferson National Accelerator Facility, 12000 Jefferson Avenue, Newport News, VA 23606 (United States)

Description

A gas cluster ion beam (GCIB) technology was successfully applied to surface treatment of Cu, stainless steel, Ti, and Nb samples and to Nb rf-cavities by using accelerated cluster ion beams of Ar, O2 and combinations of them, with accelerating voltages up to 35 kV. DC field emission (dark current) measurements and electron microscopy were used to investigate metal surfaces treated by GCIB. The experimental results showed that GCIB technique can significantly reduce the number of field emitters and can change the structure of the Nb oxide layer on the surface. The RF tests of the GCIB-treated Nb rf-cavities showed improvement of the quality factor Q at 4.5 K. The superconducting gap was also enhanced by using the oxygen GCIB irradiation exposure.

Additional details

Identifiers

Publishing Information

Journal Title
AIP Conference Proceedings
Journal Volume
1099
Journal Issue
1
Journal Page Range
p. 46-50
ISSN
0094-243X
CODEN
APCPCS

Conference

Title
12. international conference on application of accelerators in research and industry
Acronym
CAARI 2008
Dates
10-15 Aug 2008
Place
Fort Worth, TX (United States)

Optional Information

Notes
(c) 2009 American Institute of Physics