Published November 1981 | Version v1
Journal article Metadata-only

The effects of annealing upon the accumulation of amorphousness in a composite model of disorder production

Creators

  • 1. Salford Univ. (UK). Dept. of Electrical Engineering

Description

A composite model for amorphousness production in which simultaneous damage annealing is allowed during ion irradiation of semiconductors is presented. Numerical calculations using this model indicate that does rate effects may be observable under certain favourable conditions thus giving some indication as to the disordering mechanism leading to amorphous production. (author)

Additional details

Publishing Information

Journal Title
Radiat. Eff.
Journal Volume
59
Journal Issue
1-2
Series
Radiat. Eff.
Journal Page Range
69-76
ISSN
0033-7579

INIS

Country of Publication
United Kingdom
Country of Input or Organization
United Kingdom
INIS RN
13671170
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
AMORPHOUS STATE; ANNEALING; CRYSTAL DEFECTS; DOSE RATES; IONS; MATHEMATICAL MODELS; ORDER-DISORDER TRANSFORMATIONS; PHYSICAL RADIATION EFFECTS; RADIATION DOSES; SEMICONDUCTOR MATERIALS
Descriptors DEC
CHARGED PARTICLES; CRYSTAL STRUCTURE; HEAT TREATMENTS; PHASE TRANSFORMATIONS; RADIATION EFFECTS