Effect of Ti and Zn Doping on the Structural, Electric, and Magnetic Properties of GaFeO₃

Multidoped (Zn,Ti) gallium orthoferrite [GaFeO₃ and Ga_0.98Zn_0.02Fe_0.98Ti_0.02O₃] ceramic was synthesized through a solid-state reaction. X-ray analysis of the prepared material provides its basic crystal data of a single-phase orthorhombic system. The scattered crystallite size and lattice strain of the material were estimated. Analysis of the micrograph of field emission scanning electron microscope shows uniform grain distribution in the sample, suggesting the formation of good quality of sample. Founded on the magnetic measurements, it is concluded that (Zn,Ti)-modified gallium ferrite has provided a reduction in the Curie temperature (T_C); however, no significant changes in the magnetization values with Zn and Ti integration in GaFeO₃ lattice. A noteworthy effect of substitution of multiple elements at the Ga and Fe sites on dielectric constant and tangent loss of GaFeO₃ has been observed. Complete studies of temperature (180–400 K) and frequency (10–10⁷ Hz) dependence of dielectric constant and impedance have provided the effect of grains and grain boundaries on the conduction mechanism and dielectric relaxation of the material.