Structure and properties of dislocations in interfaces of bonded silicon wafers

The realization of defined dislocation networks by hydrophobic wafer bonding allows the characterization of electrical properties of individual dislocations. The present paper describes the fabrication and characterization of SOI MOSFETs with various dislocations densities in the Si channel. The aim was to investigate the electrical properties in samples containing only 6 dislocations. A drain current of ID > 1x10-2 A induced by a single dislocation was determined by data extrapolation from current measurements in combination with previously analyzed samples containing a varying dislocation density.