Published June 19, 2006 | Version v1
Journal article Metadata-only

Improving crystal quality of InGaAs/GaAs quantum dots by inductively coupled Ar plasma

Creators

  • 1. Institute of Material Research and Engineering, Singapore 117602 (Singapore)
  • 2. Center for Optical Technologies, Department of Electrical and Computer Engineering, Lehigh University, Bethlehem, Pennsylvania 18015 (United States)
  • 3. School of Electrical and Electronic Engineering, Nanyang Technological University, Singapore 639798 (Singapore)

Description

The crystal quality of InGaAs/GaAs quantum dots (QDs) is substantially improved without redistribution of composition using inductively coupled Ar plasma exposure. After plasma exposure, the QDs exhibit an increase in photoluminescence intensity by a factor of 1.7 while keeping the peak wavelength unshifted, and the band gap blueshift after rapid thermal annealing is suppressed, denoting an improvement in thermal stability. The time-resolved photoluminescence shows an increase in carrier lifetime from 735 to 1140 ps by plasma exposure, indicating the mechanism of grown-in defects reduction in the QD regions

Additional details

Identifiers

DOI
10.1063/1.2215602;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
88
Journal Issue
25
Journal Page Range
p. 251102-251102.3
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
37083711
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANNEALING; ARGON; CARRIER LIFETIME; CRYSTAL DEFECTS; CRYSTALS; ENERGY GAP; GALLIUM ARSENIDES; INDIUM COMPOUNDS; PHOTOLUMINESCENCE; PLASMA; QUANTUM DOTS; SEMICONDUCTOR MATERIALS; SPECTRAL SHIFT; STABILITY; TIME RESOLUTION
Descriptors DEC
ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL STRUCTURE; ELEMENTS; EMISSION; FLUIDS; GALLIUM COMPOUNDS; GASES; HEAT TREATMENTS; LIFETIME; LUMINESCENCE; MATERIALS; NANOSTRUCTURES; NONMETALS; PHOTON EMISSION; PNICTIDES; RARE GASES; RESOLUTION; TIMING PROPERTIES

Optional Information

Notes
(c) 2006 American Institute of Physics