Published 2011
| Version v1
Miscellaneous
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A global model coupled with Langmuir adsorption kinetics applied for investigation of inductively coupled CF4 plasma etching of Si and SiO2
Creators
- 1. Centro Tecnico Aeroespacial (CTA/ITA), Sao Jose dos Campos, SP (Brazil). Inst. Tecnologico de Aeronautica. Lab. de Plasmas e Processos
Description
no abstract available
Files
42100009.pdf
Files
(107.5 kB)
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Additional details
Publishing Information
- Imprint Pagination
- 1 p.
- Report number
- INIS-BR--9967
Conference
- Title
- 11. Brazilian meeting on plasma physics
- Original Conference Title
- Encontro de fisica 2011: 11. Encontro brasileiro de fisica dos plasmas
- Acronym
- Meeting on physics 2011
- Dates
- 5-10 Jun 2011
- Place
- Foz do Iguacu, PR (Brazil)
INIS
- Country of Publication
- Brazil
- Country of Input or Organization
- Brazil
- INIS RN
- 42100009
- Subject category
- S70: PLASMA PHYSICS AND FUSION TECHNOLOGY;
- Resource subtype / Literary indicator
- No Abstract, Conference
- Descriptors DEI
- ADSORBENTS; ADSORPTION; CHEMISORPTION; ETCHING; MAGNETIC FIELDS; MAGNETIC PROPERTIES; MAGNETOHYDRODYNAMICS; METALLOGRAPHY; PLASMA; PLASMA HEATING; PLASMA POTENTIAL; PLASMA PRODUCTION; PLASMA WAVES; SILICON; SILICON OXIDES
- Descriptors DEC
- CHALCOGENIDES; CHEMICAL REACTIONS; ELECTRIC POTENTIAL; ELEMENTS; FLUID MECHANICS; HEATING; HYDRODYNAMICS; MECHANICS; OXIDES; OXYGEN COMPOUNDS; PHYSICAL PROPERTIES; SEMIMETALS; SEPARATION PROCESSES; SILICON COMPOUNDS; SORPTION; SURFACE FINISHING