Published 1975 | Version v1
Report Restricted

Physical state of implanted W in copper

Creators

Description

Transmission electron microscopy and 4He ion channeling measurements were combined to investigate the physical state of implanted W in copper. For 600K implantations of 2 x 1015 W cm-2, W is found to be 100 percent substitutional and is still 90 percent substitutional for a dose of 1016 W cm-2. Implantation of 1017 W cm-2 produces a thin disordered surface layer of W and Cu with the W occupying no regular lattice site. On annealing to 6000C, W precipitates are formed with dimensions of a few hundred A and certain preferred orientations in the Cu lattice. (auth)

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MF available from INIS under the Report Number.

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Additional details

Publishing Information

Imprint Pagination
14 p.
Report number
SAND--75-5519

Conference

Title
International conference on applications of ion beams to materials.
Dates
9 Sep 1975.
Place
Warwick, UK.

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7227941
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Conference
Descriptors DEI
ANNEALING; COPPER ALLOYS; ELECTRON MICROSCOPY; GRAIN ORIENTATION; HELIUM IONS; ION CHANNELING; TUNGSTEN ADDITIONS; TUNGSTEN IONS; VERY LOW TEMPERATURE
Descriptors DEC
ALLOYS; ATOMIC IONS; CHANNELING; CHARGED PARTICLES; CRYSTAL STRUCTURE; HEAT TREATMENTS; IONS; MICROSCOPY; MICROSTRUCTURE; ORIENTATION; TRANSITION ELEMENT ALLOYS

Optional Information

Secondary number(s)
CONF-750926--3.