Published February 14, 2014 | Version v1
Journal article

Influence of Kr doping on neon soft X-rays emission in fast miniature plasma focus device

Description

An investigation on the possibility of enhancement of soft X-ray (SXR) (900–1600 eV) emission from a fast miniature plasma focus (FMPF) device of 235 J (at 14 kV) storage energy through doping of operating gas was performed. Neon (Ne), the operating gaseous medium, was doped with krypton (Kr) in different volumetric ratios at various operating pressures ranging from 2 to 14 mbar. The 1% Kr doping increased the average optimum SXR emission efficiency from 0.47% to 0.6% without enhancing the hard X-ray (HXR) (>1600 eV) emission. The Kr doping influenced the major pinching characteristics such as focusing efficiency and time to pinch with consequential effect on X-ray emissions. Synchronous operation of the 4 pseudo-spark gap (PSG) switches was mandatory for efficient discharge current delivery to the electrodes. A drastic improvement in the pinching efficiency was obtained with replacement of old and worn out PSG switches with the new ones. Optical imaging of current sheath dynamics was performed using gated ICCD camera to verify the normal operation of the device after the PSGs replacement. A numerical simulation analysis on the 2 cm long stainless steel tapered anode, used in this study, was done to predict the maximum SXR emission efficiency and the peak operating gas pressure. An analysis on the amount of SXR fluence generated at the source position and the proportion of it reaching the target position is also reported.

Availability note (English)

Available from http://dx.doi.org/10.1016/j.physleta.2014.01.020

Additional details

Identifiers

DOI
10.1016/j.physleta.2014.01.020;
PII
S0375-9601(14)00066-8;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
378
Journal Issue
10
Journal Page Range
p. 804-809
ISSN
0375-9601
CODEN
PYLAAG

Optional Information

Copyright
Copyright (c) 2014 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.