Published April 1979
| Version v1
Journal article
Fundamental aspects of cathodic sputtering
Description
The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods
Additional details
Publishing Information
- Journal Title
- Vide. Couches Minces
- Journal Issue
- no.196 suppl
- Series
- Vide. Couches Minces.
- ISSN
- 0042-5281
Conference
- Title
- 3. International congress on cathodic sputtering and related applications. CIP 79.
- Dates
- 11 - 14 Sep 1979.
- Place
- Nice, France.
INIS
- Country of Publication
- France
- Country of Input or Organization
- France
- INIS RN
- 11519144
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- BACKSCATTERING; CATHODE SPUTTERING; DEPOSITION; ELECTRONS; ETCHING; EXPERIMENTAL DATA; FILMS; GRAPHS; IMPURITIES; SECONDARY EMISSION; TRAPPING
- Descriptors DEC
- DATA; DATA FORMS; ELEMENTARY PARTICLES; EMISSION; FERMIONS; INFORMATION; LEPTONS; NUMERICAL DATA; SCATTERING; SPUTTERING; SURFACE FINISHING