Published April 1979 | Version v1
Journal article

Fundamental aspects of cathodic sputtering

Creators

  • 1. Slovenska Vysoka Skola Technicka, Bratislava (Czechoslovakia)

Description

The main fundamental aspects and problems of cathodic sputtering used mainly for thin film deposition and sputter etching are discussed. Among many types of known sputtering techniques the radiofrequency /RF/ diode sputtering is the most universal one and is used for deposition of metals, alloys, metallic compounds, semiconductors and insulators. It seems that nowadays the largest number of working sputtering systems is of diode type. Sometimes also the dc or rf triode sputtering systems are used. The problems in these processes are practically equivalent and comparable with the problems in the diode method and therefore our discussion will be, in most cases applicable for both, the diode and triode methods

Additional details

Publishing Information

Journal Title
Vide. Couches Minces
Journal Issue
no.196 suppl
Series
Vide. Couches Minces.
ISSN
0042-5281

Conference

Title
3. International congress on cathodic sputtering and related applications. CIP 79.
Dates
11 - 14 Sep 1979.
Place
Nice, France.

INIS

Country of Publication
France
Country of Input or Organization
France
INIS RN
11519144
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Resource subtype / Literary indicator
Conference, Numerical Data
Descriptors DEI
BACKSCATTERING; CATHODE SPUTTERING; DEPOSITION; ELECTRONS; ETCHING; EXPERIMENTAL DATA; FILMS; GRAPHS; IMPURITIES; SECONDARY EMISSION; TRAPPING
Descriptors DEC
DATA; DATA FORMS; ELEMENTARY PARTICLES; EMISSION; FERMIONS; INFORMATION; LEPTONS; NUMERICAL DATA; SCATTERING; SPUTTERING; SURFACE FINISHING