The effect of solvent on the etching of ITO electrode
Creators
Description
In this study, the effect of solvents, HCl and aqua regia at room temperature, on the etching behavior of ITO film was investigated. A higher etching rate was obtained in aqua regia than in HCl. However, via XPS analysis, it was found that there was more surface residual byproduct in aqua regia etchant than in HCl. The surface concentration (ratio of chlorine to indium) was 7.2 and 0.38 in aqua regia and HCl, respectively. It was also observed that the surface residual byproduct reduced the carrier mobility due to the ionized impurity scattering. As seen in the ITO pattern after the etching process, a serious undercut occurred with the aqua regia due to the fast etching rate. Thus, the 9 M HCl solution is more suitable as an etchant for ITO/OLED application
Additional details
Identifiers
- DOI
- 10.1016/j.matchemphys.2003.11.021;
- PII
- S0254058403005406;
Publishing Information
- Journal Title
- Materials Chemistry and Physics
- Journal Volume
- 84
- Journal Issue
- 1
- Journal Page Range
- p. 146-150
- ISSN
- 0254-0584
- CODEN
- MCHPDR
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 38075767
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- AQUA REGIA; CARRIER MOBILITY; CONCENTRATION RATIO; DOPED MATERIALS; ELECTRODES; ETCHING; FILMS; HYDROCHLORIC ACID; INDIUM OXIDES; LIGHT EMITTING DIODES; SCATTERING; TEMPERATURE RANGE 0273-0400 K; TIN OXIDES; X-RAY PHOTOELECTRON SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHLORINE COMPOUNDS; DIMENSIONLESS NUMBERS; ELECTRON SPECTROSCOPY; HALOGEN COMPOUNDS; HYDROGEN COMPOUNDS; INDIUM COMPOUNDS; INORGANIC ACIDS; INORGANIC COMPOUNDS; MATERIALS; MOBILITY; OXIDES; OXYGEN COMPOUNDS; PHOTOELECTRON SPECTROSCOPY; SEMICONDUCTOR DEVICES; SEMICONDUCTOR DIODES; SPECTROSCOPY; SURFACE FINISHING; TEMPERATURE RANGE; TIN COMPOUNDS
Optional Information
- Copyright
- Copyright (c) 2003 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.