Published December 16, 2002 | Version v1
Journal article

Change in photoluminescence from Er-doped TiO2 thin films induced by optically assisted reduction

  • 1. Department of Physics, Tokyo University of Science, Kagurazaka, Shinjuku-ku, Tokyo 162-8601 (Japan)
  • 2. Faculty of Engineering, Toyo University, Kawagoe, Saitama 350-8585 (Japan)

Description

Erbium-doped TiO2 (TiO2:Er) thin films with the anatase structure have been prepared on Si substrate by laser ablation. Sharp and intense Er-related emission in the visible region as well as in the IR region has been observed under over-band-gap excitation. The broad photoluminescence (PL) peaking at about 530 nm newly appears at low temperature. It has been understood that the broad PL is induced by an optically assisted reduction effect that is caused by both the H2O adsorption and the reduction process of TiO2 to Ti2O3 by UV illumination. In the IR region, Er-related emission consisted of one main peak located at 1.534 μm and many subpeaks located at around 1.54 μm can be observed even at room temperature. The drastic thermal quenching of the Er-related 1.54 μm emission is also considered due to the optically assisted reduction effect

Additional details

Identifiers

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
81
Journal Issue
25
Journal Page Range
p. 4733-4735
ISSN
0003-6951
CODEN
APPLAB

Optional Information

Notes
(c) 2002 American Institute of Physics.