Published May 2014
| Version v1
Journal article
Novel architecture for measurements in resistive MEMS sensors
- 1. Sankalp Analog Solutions, Sankalp Semiconductor Pvt Ltd, DLF II IT Park, Block 2F, AA-2, New Town, Kolkata, West Bengal-700156 (India)
- 2. Electronics and Electrical Communication Engineering, A-24, IIT Campus, Kharagpur, West Bengal-721302 (India)
- 3. Electronics and Electrical Communication Engineering, 2BR-12, IIT Campus, Kharagpur, West Bengal-721302 (India)
Description
A low voltage, low power, resistive sensor architecture is proposed in this paper. The architecture is novel as it enhances the sensitivity along the main axis as well as reducing the impact of cross axes components. The proposed scheme also allows the simultaneous measurement of sensitivity along six different axes. With less than 15% of the power of its Wheatstone bridge [1] counterpart and with a voltage level as low as 2.25 V, this architecture also enables the realization of the sensor using fewer resistive elements. The modified sensor structure, along with the front-end signal processing circuit, is discussed. (paper)
Availability note (English)
Available from http://dx.doi.org/10.1088/0957-0233/25/5/055106Additional details
Identifiers
Publishing Information
- Journal Title
- Measurement Science and Technology
- Journal Volume
- 25
- Journal Issue
- 5
- Journal Page Range
- [17 p.]
- ISSN
- 0957-0233
- CODEN
- MSTCEP
INIS
- Country of Publication
- United Kingdom
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 47067350
- Subject category
- S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
- Descriptors DEI
- ELECTRIC POTENTIAL; MEMS; PROCESSING; SENSITIVITY; SENSORS; SIGNALS