Published May 2014 | Version v1
Journal article

Novel architecture for measurements in resistive MEMS sensors

  • 1. Sankalp Analog Solutions, Sankalp Semiconductor Pvt Ltd, DLF II IT Park, Block 2F, AA-2, New Town, Kolkata, West Bengal-700156 (India)
  • 2. Electronics and Electrical Communication Engineering, A-24, IIT Campus, Kharagpur, West Bengal-721302 (India)
  • 3. Electronics and Electrical Communication Engineering, 2BR-12, IIT Campus, Kharagpur, West Bengal-721302 (India)

Description

A low voltage, low power, resistive sensor architecture is proposed in this paper. The architecture is novel as it enhances the sensitivity along the main axis as well as reducing the impact of cross axes components. The proposed scheme also allows the simultaneous measurement of sensitivity along six different axes. With less than 15% of the power of its Wheatstone bridge [1] counterpart and with a voltage level as low as 2.25 V, this architecture also enables the realization of the sensor using fewer resistive elements. The modified sensor structure, along with the front-end signal processing circuit, is discussed. (paper)

Availability note (English)

Available from http://dx.doi.org/10.1088/0957-0233/25/5/055106

Additional details

Publishing Information

Journal Title
Measurement Science and Technology
Journal Volume
25
Journal Issue
5
Journal Page Range
[17 p.]
ISSN
0957-0233
CODEN
MSTCEP

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
47067350
Subject category
S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
ELECTRIC POTENTIAL; MEMS; PROCESSING; SENSITIVITY; SENSORS; SIGNALS