Published September 2004
| Version v1
Journal article
Study of Surface Electric Field Effect on Raman Scattering in GaP
Creators
- 1. R. Agladze Institute of Inorganic Chemistry and Electrochemistry, Tbilisi (Georgia)
Description
We have experimentally first registered in indirect band semiconductor GaP forbidden longitudinal optic phonon (LO) induced by surface electric field from (110) crystal surface. The intensity of this phonon increases with bulk electron concentration, whereas the intensity of transverse optic phonon (TO) remains unchanged. The intensity of LO phonon increases still more when we covered semiconductor (110) surface with semitransparent aluminum layer and recorded a spectrum with this layer. It is possible to observe this effect in resonance Raman scattering. (author)
Additional details
Publishing Information
- Journal Title
- Bulletin of the Georgian National Academy of Sciences
- Journal Volume
- 170
- Journal Issue
- 2
- Journal Page Range
- p. 257-260
- ISSN
- 0132-1447
INIS
- Country of Publication
- Georgia
- Country of Input or Organization
- Georgia
- INIS RN
- 46134232
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- ABUNDANCE; ALUMINIUM; CONCENTRATION RATIO; DEPLETION LAYER; ECOLOGICAL CONCENTRATION; ELECTRIC FIELDS; ELECTRONS; GALLIUM PHOSPHIDES; LAYERS; PHONONS; RAMAN EFFECT; SEMICONDUCTOR MATERIALS; SPECTRA; SURFACES
- Descriptors DEC
- DIMENSIONLESS NUMBERS; ELEMENTARY PARTICLES; ELEMENTS; FERMIONS; GALLIUM COMPOUNDS; LAYERS; LEPTONS; MATERIALS; METALS; PHOSPHIDES; PHOSPHORUS COMPOUNDS; PNICTIDES; QUASI PARTICLES
Optional Information
- Notes
- 3 refs., 2 figs.