Published June 2006 | Version v1
Journal article Metadata-only

Resonant Raman scattering in InGaN alloys

Creators

  • 1. A.F. Ioffe Physico-Technical Institute, 194021 St. Petersburg (Russian Federation)
  • 2. Nuclear Physics Institute, 188350 St. Petersburg (Russian Federation)
  • 3. Department of Electrical and Computer Engineering, Cornell University, Ithaca, New York 14853 (United States)

Description

A strong resonant behavior of the Raman scattering from LO-phonons in n-InGaN alloys at excitation near the interband absorption threshold was observed. An approach has been developed to describe the resonant Raman cross sectional profile in the presence of a Burstein-Moss shift of the interband optical transitions. It has been shown that a simultaneous study of absorption, photoluminescence, and Raman spectra provides reliable information about the band gap and can be efficient for the alloy characterization. Our data show that the band gap composition dependence of InGaN is characterized by the strongly nonlinear behavior with the large bowing parameter of 2.5-2.6 eV. (copyright 2006 WILEY-VCH Verlag GmbH and Co. KGaA, Weinheim) (orig.)

Availability note (English)

Available from: http://dx.doi.org/10.1002/pssb.200565350

Additional details

Identifiers

DOI
10.1002/pssb.200565350;

Publishing Information

Journal Title
Physica Status Solidi. B, Basic Research
Journal Volume
243
Journal Issue
7
Journal Page Range
p. 1494-1498
ISSN
0370-1972
CODEN
PSSBBD

INIS

Country of Publication
Germany
Country of Input or Organization
Germany
INIS RN
37071349
Subject category
S36: MATERIALS SCIENCE;
Resource subtype / Literary indicator
Numerical Data
Descriptors DEI
BAND THEORY; ELECTRONIC STRUCTURE; ENERGY GAP; EV RANGE 01-10; EXCITATION FUNCTIONS; EXPERIMENTAL DATA; GALLIUM NITRIDES; INDIUM NITRIDES; N-TYPE CONDUCTORS; PHONONS; PHOTON COLLISIONS; RAMAN EFFECT; RAMAN SPECTRA; RESONANCE SCATTERING; TEMPERATURE RANGE 0273-0400 K; VISIBLE RADIATION
Descriptors DEC
COLLISIONS; CROSS SECTIONS; DATA; DIFFERENTIAL CROSS SECTIONS; ELECTROMAGNETIC RADIATION; ENERGY RANGE; EV RANGE; FUNCTIONS; GALLIUM COMPOUNDS; INDIUM COMPOUNDS; INELASTIC SCATTERING; INFORMATION; MATERIALS; NITRIDES; NITROGEN COMPOUNDS; NUMERICAL DATA; PNICTIDES; QUASI PARTICLES; RADIATIONS; SCATTERING; SEMICONDUCTOR MATERIALS; SPECTRA; TEMPERATURE RANGE

Optional Information

Notes
With 2 figs., 13 refs.. SICI: 0370-1972(200606)243:7<1494::AID-PSSB200565350>3.0.TX;2-I