Published February 27, 2008 | Version v1
Journal article Metadata-only

Comment on 'Temperature dependence of the current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions'

Creators

  • 1. Department of Physics, Vilnius Pedagogical University, Studentu 39, LT-08106 Vilnius (Lithuania)

Description

Current-voltage characteristics of Sn/PANI/p-Si/Al heterojunctions, measured in the temperature range 140-280 K by Kaya et al (2007 J. Phys.: Condens. Matter 19 406205), are reinterpreted in the framework of phonon-assisted tunnelling theory, as a free-charge-carrier generation mechanism in the strong electrical field. It is shown that phonon-assisted tunnelling more adequately describes the peculiarities of the variation of I-V data with temperature in PANI polymers. (comment)

Availability note (English)

Available from http://dx.doi.org/10.1088/0953-8984/20/8/088003

Additional details

Identifiers

DOI
10.1088/0953-8984/20/8/088003;
PII
S0953-8984(08)64483-5;

Publishing Information

Journal Title
Journal of Physics. Condensed Matter
Journal Volume
20
Journal Issue
8
Journal Page Range
[3 p.]
ISSN
0953-8984
CODEN
JCOMEL

INIS

Country of Publication
United Kingdom
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
40035559
Subject category
S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
Descriptors DEI
ALUMINIUM; CHARGE CARRIERS; CURRENTS; ELECTRIC CONDUCTIVITY; ELECTRIC FIELDS; ELECTRIC POTENTIAL; HETEROJUNCTIONS; PHONONS; POLYMERS; SILICON; TEMPERATURE DEPENDENCE; TEMPERATURE RANGE; TEMPERATURE RANGE 0065-0273 K; TIN; TUNNEL EFFECT
Descriptors DEC
ELECTRICAL PROPERTIES; ELEMENTS; METALS; PHYSICAL PROPERTIES; QUASI PARTICLES; SEMICONDUCTOR JUNCTIONS; SEMIMETALS; TEMPERATURE RANGE