Published January 20, 1998
| Version v1
Journal article
Strained semiconductor structures for polarized electrons
Creators
- 1. Department of Electrical and Computer Engineering, University of California, San Diego, La Jolla, California 92093-0407 (United States)
Description
Limitations of strained semiconductor structures for polarized electrons reported to date are described, in particular, critical layer thickness and partial and unisotropic lattice relaxation. We also proposed a new strain-compensated superlattice to circumvent these problems
Additional details
Identifiers
- DOI
- 10.1063/1.54987;
Publishing Information
- Journal Title
- AIP Conference Proceedings
- Journal Volume
- 421
- Journal Issue
- 1
- Journal Page Range
- p. 276-283
- ISSN
- 0094-243X
- CODEN
- APCPCS
Conference
- Title
- 7. international workshop on polarized gas targets and polarized beams
- Dates
- 18-22 Aug 1997
- Place
- Urbana, IL (United States)
INIS
- Country of Publication
- United States
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 40056656
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY; S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- ELECTRONS; EPITAXY; LAYERS; PHOTOEMISSION; POLARIZATION; SEMICONDUCTOR MATERIALS; SPIN; SPIN-LATTICE RELAXATION; STRAINS; SUPERLATTICES
- Descriptors DEC
- ANGULAR MOMENTUM; CRYSTAL GROWTH METHODS; ELEMENTARY PARTICLES; EMISSION; FERMIONS; LEPTONS; MATERIALS; PARTICLE PROPERTIES; RELAXATION; SECONDARY EMISSION
Optional Information
- Notes
- (c) 1998 American Institute of Physics.