Published April 16, 1989 | Version v1
Journal article

Diffusion of indium implanted into steel

  • 1. Uniwersytet Marii Curie-Sklodowskiej, Lublin (Poland). Inst. Fizyki

Description

The diffusion of indium from the implanted layer in stainless steel (1H18N9T) is investigated. Indium ions with energies of 150 and 250 keV are implanted to a dose 1016 ions/cm2 at room temperature. After implantation the steel samples are heat treated in vacuum for 30 min at temperature ranging from 100 to 700 0C. The concentration profiles of implanted indium before and after the annealing process are measured by means of secondary ion mass spectrometry (SIMS). The implanted layers are also analysed by Rutherford backscattering (RBS). (author)

Additional details

Publishing Information

Journal Title
Physica Status Solidi A
Journal Volume
112
Journal Issue
2
Series
Phys. Status Solidi A.
Journal Page Range
835-837
ISSN
0031-8965
CODEN
PSSAB

Conference

Title
International conference on ion implantation in semiconductor and other materials.
Dates
12-17 Sep 1988.
Place
Lublin (Poland).