High fluence implantation in glasses: chemical interactions
Creators
- 1. Unita del Consorzio INFM, Dipt. di Fisica, Padova (Italy)
- 2. ECP - EniChem Polimeri, Porto Marghera, Venezia (Italy)
- 3. Dipt. di Chimica Inorganica, Metallorganica ed Analitica, Padova (Italy)
- 4. Unita del Consorzio INFM, Dipt. di Chimica Fisica, Venezia (Italy)
- 5. Centro Nazionale Ricerche e Sviluppo Materiali (CNRSM), Brindisi (Italy)
Description
Results will be given on chemical interactions in amorphous SiO2 implanted with reactive and non-reactive species. Samples were implanted with nitrogen, silicon, titanium and silver; a set of samples already implanted with these elements (excluding those implanted with nitrogen) has been subjected to a second implant with nitrogen ions, at the dose of 2x1017 ions cm-2, at different energies. Samples have been characterized by secondary ion mass spectrometry, X-ray photoelectron spectroscopy, nuclear techniques and optical absorption measurements. Radiation damage and chemical effects have been discriminated; precipitation of the implanted species, as well as chemical compound formation in the interaction both between the implanted species and the host matrix and between the implanted species themselves have been detected. (orig.)
Additional details
Publishing Information
- Journal Title
- Nuclear Instruments and Methods in Physics Research. Section B
- Journal Volume
- 65
- Journal Issue
- 1-4
- Series
- Nucl. Instrum. Methods Phys. Res., Sect. B.
- Journal Page Range
- 367-374
- ISSN
- 0168-583X
- CODEN
- NIMBE
Conference
- Title
- 6. conference on radiation effects in insulators.
- Dates
- 24-28 Jun 1991.
- Place
- Weimar (Germany).
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- Netherlands
- INIS RN
- 23070758
- Subject category
- S36: MATERIALS SCIENCE;
- Resource subtype / Literary indicator
- Conference
- Descriptors DEI
- AMORPHOUS STATE; ANNEALING; CHEMICAL COMPOSITION; GLASS; ION IMPLANTATION; MASS SPECTROSCOPY; NITROGEN IONS; NUCLEAR REACTION ANALYSIS; PHOTOELECTRON SPECTROSCOPY; PHYSICAL RADIATION EFFECTS; PRECIPITATION; RADIATION DOSES; SILICON IONS; SILICON OXIDES; SILVER IONS; STRESSES; TITANIUM IONS; X RADIATION; X-RAY DIFFRACTION; X-RAY SPECTROSCOPY
- Descriptors DEC
- CHALCOGENIDES; CHARGED PARTICLES; CHEMICAL ANALYSIS; COHERENT SCATTERING; DIFFRACTION; ELECTROMAGNETIC RADIATION; ELECTRON SPECTROSCOPY; HEAT TREATMENTS; IONIZING RADIATIONS; IONS; NONDESTRUCTIVE ANALYSIS; OXIDES; OXYGEN COMPOUNDS; RADIATION EFFECTS; RADIATIONS; SCATTERING; SEPARATION PROCESSES; SILICON COMPOUNDS; SPECTROSCOPY