On some problems of mathematical modeling of diffusion of non-equilibrium minority charge carriers generated by kilovolt electrons in semiconductors

Some problems of mathematical modeling of the diffusion of non-equilibrium minority charge carriers generated by kilovolt electrons in semiconductor targets are considered. The calculations were carried out by the matrix method, which makes it possible to solve the equations of heat and mass transfer in multilayer planar structures with an arbitrary number of layers. Estimates of the distributions of minority charge carriers in two-layer semiconductor structures of the "film-substrate" type are obtained. (paper)