Published July 7, 1975 | Version v1
Journal article Metadata-only

Tunneling conductivity in 4Hb-TaS2

Creators

  • 1. Department of Physics, Simon Fraser University, Burnaby, British Columbia, Canada V5A 1S6

Description

A T2 behavior for the conductivtiy across the layers is observed in 4Hb-TaS2 crystals below 350K. This indicates that tunneling occurs between metallic layers separated by an insulating layer. Evidence for thermally activated hopping is observed at higher temperatures

Additional details

Additional titles

Augmented title (English)
Below 32"0K

Identifiers

DOI
10.1103/physrevlett.35.62;

Publishing Information

Journal Title
Physical Review Letters
Journal Volume
35
Journal Issue
1
Series
Phys. Rev. Lett.
Journal Page Range
62-65
ISSN
0031-9007

INIS

Country of Publication
United States
Country of Input or Organization
United States
INIS RN
7227912
Subject category
S36: MATERIALS SCIENCE; S71: CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS;
Descriptors DEI
ELECTRIC CONDUCTIVITY; LAYERS; SUPERCONDUCTIVITY; TANTALUM SULFIDES; TEMPERATURE DEPENDENCE; TUNNEL EFFECT
Descriptors DEC
CHALCOGENIDES; ELECTRICAL PROPERTIES; PHYSICAL PROPERTIES; SULFIDES; SULFUR COMPOUNDS; TANTALUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS

Optional Information

Notes
Updated automatically by Metadata and Full-Text Enrichment Agent