Published March 1991
| Version v1
Journal article
Decay kinetics of excitons bound to isoelectronic traps in neutron-irradiated silicon
Creators
- 1. AN SSSR, Moscow (Russian Federation). Inst. Radiotekhniki i Ehlektroniki
Description
Relaxation of recombination radiation of excitons bound at radiation defects in silicon irradiated by thermal neutrons is studied. Hydrogen strong effect on defect formation in silicon is detected. It is shown that for all considered excitons kinetic of their decomposition is determined by the detected excited states. Assumption about possibility of black center existence is made
Additional details
Additional titles
- Original title (Russian)
- Kinetika raspada ehksitonov, svyazannykh na izoehlektronnykh lovushkakh v kremnii, obluchennom nejtronami
Publishing Information
- Journal Title
- Fizika Tverdogo Tela
- Journal Volume
- 33
- Journal Issue
- 3
- Journal Page Range
- p. 859-867.
- ISSN
- 0367-3294
- CODEN
- FTVTAC
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 24021557
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Descriptors DEI
- CRYSTAL DEFECTS; EXCITONS; KINETIC EQUATIONS; LIFETIME; NEUTRON FLUENCE; PHOSPHORUS ADDITIONS; PHOTOLUMINESCENCE; PHYSICAL RADIATION EFFECTS; RECOMBINATION; RELAXATION; SILICON; THERMAL NEUTRONS; TRAPS
- Descriptors DEC
- BARYONS; CRYSTAL STRUCTURE; ELEMENTARY PARTICLES; ELEMENTS; EMISSION; EQUATIONS; FERMIONS; HADRONS; LUMINESCENCE; NEUTRONS; NUCLEONS; PHOTON EMISSION; QUASI PARTICLES; RADIATION EFFECTS; SEMIMETALS