Carrier concentration profiles and profile composition in silicon implanted with 0.5 - 7.5 NeV P+ ions

The MeV implantation is very important for fabricating semiconductor devices and very large scale integrated circuits. The carrier concentration profiles of high energy P+ implanted into silicon have been studied. P+ ions with energy ranging from 0.5 to 7.5 MeV were implanted into silicon with dose rainging from 2 x 1012 to 1013/cm2. The results indicate that carrier concentration profiles consist of two Gaussians with different deviation σfront and σback. A method of forming uniform uniform profiles with multiple implantation was suggested. The various specific carrier concentration profiles can be obtained by multiple implantation with different energies, doses and masking technology. Rapid thermal annealing (RTA) has been used to obtain good reliability and repeatability. The residual defects of the samples are measured by high voltage TEM. It is shown that after RTA no defects appear. Specific transistors produced using P+multiple implantation have satisfactory characters