On conduction mechanism of silicate glass doped by oxide compounds of ruthenium. Diffusion and percolation levels

The investigations of conduction mechanism of silicate glass doped by oxide compounds of ruthenium and having electronic conduction are presented. Nonhomogeneous structure of glass and existing of nanocrystals are taken into account. It is assumed that these nanocrystals act as localization centers for charge carriers. In addition, formation of impurity subband in the glass gap due to diffusion of dopant atoms into the glass under sintering of the mixture of powders is taken into account. As a result, the thermal activated conductivity and hopping conductivity act simultaneously at low temperatures, while structure transitions in nanocrystals and sharp decreasing of conductivity due to increasing of interatomic distance are observed at high temperatures. (author)