Published November 25, 2005 | Version v1
Journal article

Characterisation of titanium oxide film grown in 0.9% NaCl at different sweep rates

  • 1. Department of Materials, University of Oxford, Oxford OX1 3PH (United Kingdom)
  • 2. Department of Materials Science, National University of Singapore, Lower Kent Ridge Road 119260 (Singapore)

Description

The nature of the anodic oxide film that forms on titanium on titanium in 0.9% NaCl has been investigated using a wide range of techniques. A linear relationship was found between the critical current density required for passivation of titanium in 0.9% NaCl and the sweep rate. Anodic oxide films formed on titanium in 0.9% NaCl appear to consist of two layers, an inner compact layer, the growth of which continues to follow a high field growth law, and a porous less protective outer porous layer. XPS and XRD indicated that passive films on titanium consist mainly of TiO2. However, hydroxides and lower oxides are also present, especially in rapidly grown films. XRD data indicated that in 0.9% NaCl the anodic oxide film is formed through the preferential removal atoms in the plane of (0 0 2) in the course of electrochemical reaction. A model based analysis XPS spectra was proposed to explain the growth rate dependence of the degree of protection offered by anodic oxide films on titanium. XPS clearly demonstrated the present of Ti(III) and Ti(II) cations in the passive film. This is strong evidence that cation migration more likely dominates over anion migration in the growth mechanism of anodic oxide film. XPS data also revealed that the concentrations of Ti(III) and Ti(II) species within the oxide films increased as the oxide/metal interface was approached

Additional details

Identifiers

DOI
10.1016/j.electacta.2005.05.051;
PII
S0013-4686(05)00615-8;

Publishing Information

Journal Title
Electrochimica Acta
Journal Volume
51
Journal Issue
6
Journal Page Range
p. 1099-1107
ISSN
0013-4686
CODEN
ELCAAV

Optional Information

Copyright
Copyright (c) 2005 Elsevier Science B.V., Amsterdam, The Netherlands, All rights reserved.