Published 1993
| Version v1
Book
Mechanism of dose-rate dependence of electrical activation in ion-implanted GaAs
Creators
- 1. Electrotechnical Lab., Tsukuba-shi, Ibaraki (Japan)
Description
To elucidate the mechanism of dose rate (DR) dependence of electrical activation, following two questions are investigated; why the amount of damage remaining after ion bombardment depends on DR and why it affects the electrical activation after high temperature annealing. From the observation that the DR dependence scales with temperature, the activation energy of recovery during ion irradiation has been estimated to be 0.75 and 1.0 eV. A higher DR suppresses the recovery and results in more damage, which in turn delays the electrical activation of implanted impurities
Additional details
Publishing Information
- Publisher
- Materials Research Society.
- Imprint Place
- Pittsburgh, PA (United States)
- ISBN
- 1-55899-174-3
- Imprint Title
- Beam solid interactions: Fundamentals and applications
- Imprint Pagination
- 932 p.
- Journal Page Range
- p. 159-164.
Conference
- Title
- 16. Materials Research Society (MRS) fall meeting.
- Dates
- 30 Nov - 5 Dec 1992.
- Place
- Boston, MA (United States).
INIS
- Country of Publication
- United States
- Country of Input or Organization
- United States
- INIS RN
- 25036112
- Subject category
- S36: MATERIALS SCIENCE; S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Conference, Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; GALLIUM ARSENIDES; IMPURITIES; ION IMPLANTATION; PHYSICAL RADIATION EFFECTS; SELENIUM IONS; SILICON IONS; TEMPERATURE DEPENDENCE
- Descriptors DEC
- ARSENIC COMPOUNDS; ARSENIDES; CHARGED PARTICLES; DATA; GALLIUM COMPOUNDS; INFORMATION; IONS; NUMERICAL DATA; PNICTIDES; RADIATION EFFECTS
Optional Information
- Secondary number(s)
- CONF-921101--.