Numerical study of heat transport and fluid flow during the silicon crystal growth process by the Czochralski method

A global analysis of heat transfer and fluid flow in a real Czochralski single silicon crystal furnace is developed using the FLUENT package. Good agreement was obtained for comparisons of the power and crystal growth speed between the simulation and experimental data, and the effect of the length of the crystal on heat transfer and fluid flow was analyzed. The results showed that Tmax increases and its location moves downward as the crystal length increases. The flow pattern in the melt does not change until the crystal grows to 900 mm. As the crystal length increases, the flow pattern in the first gas area only changes when the crystal length is less than 700 mm, but the flow pattern in the second area changes throughout the growth process. (semiconductor materials)