Published 1989 | Version v1
Book

Effect of period gain in continuous-wave (Al,Ga)As epitaxial surface-emitting lasers

  • 1. Sandia National Labs., Albuquerque, NM (USA)

Description

Epitaxial surface-emitting lasers (ESELs) can be formed with two semiconductor multilayer mirrors surrounding an active region. The active region can have composition modulation with halfwavelength periodicity. This confers significant advantages over conventional edge-emitting lasers. By growing confining wells with halfwave periodicity, carriers can be confined in regions corresponding to maxima in the resonating wave. Thus the laser gain can be tailored layer by layer during growth, and the gain per unit length of lasing material can be increased. ESEL structures were grown by MBE on a (100) GaAs substrate

Additional details

Publishing Information

Publisher
Optical Society of America.
Imprint Place
Washington, DC (USA)
Imprint Title
OSA conference on lasers and electro-optics (1989 Technical Digest series)
Imprint Pagination
443 p.
Series
Volume 11.
Journal Page Range
p. 380-382.

Conference

Title
conference on lasers and electro optics.
Acronym
CLEO '89
Dates
24-28 Apr 1989.
Place
Baltimore, MD (USA).

Optional Information

Notes
Imprint:Technical Paper FC3.
Secondary number(s)
CONF-890423--.