Published April 1986
| Version v1
Journal article
Compensation effect of Sn impurity in cadmium telluride
- 1. Chernovitskij Gosudarstvennyj Univ. (Ukrainian SSR)
Description
The equilibrium characteristics of CdFe:Sn crystals grown by the Bridgman method are investigated. The impurity content in samples has been within the NSn=1016-1018 cm-3 limits. It has been found that at a certain (critical) Sn (Ncrt) concentration a sharp increase of specific resistance occurs and the material becomes n-type semi-insulators. The Ncrt(∼ 7x1016 cm-3) is determined. The effect of thermal treatment (800 deg C, PCd=min) on the properties of semiinsulating CdTe:Sn samples is studied. It is established that equilibrium crystal characteristics (carrier mobility, carrier density) practically remain unchainged
Additional details
Additional titles
- Original title (Russian)
- Kompensiruyushchee dejstvie primesi Sn v telluride kadmiya
Publishing Information
- Journal Title
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Volume
- 29
- Journal Issue
- 4
- Series
- Izv. Vyssh. Uchebn. Zaved., Fiz.
- Journal Page Range
- 66-69
- ISSN
- 0021-3411
- CODEN
- IVUFA
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- USSR
- INIS RN
- 18012810
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANNEALING; CADMIUM TELLURIDES; CARRIER DENSITY; ELECTRIC CONDUCTIVITY; MONOCRYSTALS; QUANTITY RATIO; TIN ADDITIONS
- Descriptors DEC
- CADMIUM COMPOUNDS; CHALCOGENIDES; CRYSTALS; ELECTRICAL PROPERTIES; HEAT TREATMENTS; PHYSICAL PROPERTIES; TELLURIDES; TELLURIUM COMPOUNDS
Optional Information
- Notes
- For English translation see the journal Soviet Physics Journal (USA).