Published January 19, 2004 | Version v1
Journal article Metadata-only

InAs/InAsP composite channels for antimonide-based field-effect transistors

Creators

  • 1. Rockwell Scientific Company, Thousand Oaks, California 91360 (United States)
  • 2. Department of Materials, and Department of Electrical, and Computer Engineering, University of California, Santa Barbara, California 93106-5050 (United States)

Description

We report the growth and transport characteristics of stepped InAs/InAs1-xPx quantum wells with AlSb barriers. Electron mobilities and carrier concentrations in these composite stepped quantum wells were studied as a function of growth temperature and phosphorus content. For InAs1-xPx grown at 430 deg. C substrate temperature (nominal x=0.2), a high 22 500 cm2/V s electron mobility was observed, while 7100 cm2/V s mobility was observed in a single strained InAs1-xPx quantum well layer. Heterostructure field-effect transistors fabricated using the composite quantum wells exhibited increased breakdown voltage and a 14:1 reduction in source-drain dc conduction when compared to a similar InAs-channel device

Additional details

Identifiers

DOI
10.1063/1.1642275;

Publishing Information

Journal Title
Applied Physics Letters
Journal Volume
84
Journal Issue
3
Journal Page Range
p. 437-439
ISSN
0003-6951
CODEN
APPLAB

INIS

Country of Publication
United States
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
36027983
Subject category
S36: MATERIALS SCIENCE; S46: INSTRUMENTATION RELATED TO NUCLEAR SCIENCE AND TECHNOLOGY;
Descriptors DEI
BREAKDOWN; CARRIER MOBILITY; CRYSTAL GROWTH; ELECTRIC POTENTIAL; ELECTRON GAS; ELECTRON MOBILITY; FIELD EFFECT TRANSISTORS; INDIUM ARSENIDES; LAYERS; MOLECULAR BEAM EPITAXY; PHOSPHORUS ADDITIONS; QUANTUM WELLS; SEMICONDUCTOR MATERIALS; SUBSTRATES; TEMPERATURE RANGE 0400-1000 K
Descriptors DEC
ALLOYS; ARSENIC COMPOUNDS; ARSENIDES; CRYSTAL GROWTH METHODS; EPITAXY; INDIUM COMPOUNDS; MATERIALS; MOBILITY; NANOSTRUCTURES; PARTICLE MOBILITY; PNICTIDES; SEMICONDUCTOR DEVICES; TEMPERATURE RANGE; TRANSISTORS

Optional Information

Notes
(c) 2004 American Institute of Physics.