Published August 2001 | Version v1
Journal article

Interface and surface characterization of lead zirconate titanate thin films grown by sol-gel method

  • 1. Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua Univ., Beijing (China)
  • 2. Institute of Microelectronics, Tsinghua Univ., Beijing (China)

Description

The ferroelectric Pb(Zr, Ti)O3 (PZT) thin films have been directly synthesized on silicon substrates by sol-gel method. X-ray diffraction (XRD) analysis reveals that besides the rhombohedral structure, the random oriented tetragonal perovskite PZT is formed with the lattice parameters of a=3.97 A and c=4.10 A. Energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) results indicate that the chemical composition of the PZT thin film is stoichiometric just as designed. High resolution electron microscopy (HREM) results show that amorphous SiOx (x=1-2) layer and nanometer lead grains are formed at the interface between the silicon substrate and PZT thin film. (author)

Additional details

Publishing Information

Journal Title
Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes and Review Papers
Journal Volume
40
Journal Issue
8
Journal Page Range
p. 5074-5078
ISSN
0021-4922

Optional Information

Notes
23 refs., 6 figs., 1 tab.