Published August 2001
| Version v1
Journal article
Interface and surface characterization of lead zirconate titanate thin films grown by sol-gel method
- 1. Electron Microscopy Laboratory, School of Materials Science and Engineering, Tsinghua Univ., Beijing (China)
- 2. Institute of Microelectronics, Tsinghua Univ., Beijing (China)
Description
The ferroelectric Pb(Zr, Ti)O3 (PZT) thin films have been directly synthesized on silicon substrates by sol-gel method. X-ray diffraction (XRD) analysis reveals that besides the rhombohedral structure, the random oriented tetragonal perovskite PZT is formed with the lattice parameters of a=3.97 A and c=4.10 A. Energy dispersive X-ray spectroscopy (EDS) and electron energy loss spectroscopy (EELS) results indicate that the chemical composition of the PZT thin film is stoichiometric just as designed. High resolution electron microscopy (HREM) results show that amorphous SiOx (x=1-2) layer and nanometer lead grains are formed at the interface between the silicon substrate and PZT thin film. (author)
Additional details
Publishing Information
- Journal Title
- Japanese Journal of Applied Physics. Part 1, Regular Papers, Short Notes and Review Papers
- Journal Volume
- 40
- Journal Issue
- 8
- Journal Page Range
- p. 5074-5078
- ISSN
- 0021-4922
INIS
- Country of Publication
- Japan
- Country of Input or Organization
- Japan
- INIS RN
- 32053621
- Subject category
- S75: CONDENSED MATTER PHYSICS, SUPERCONDUCTIVITY AND SUPERFLUIDITY;
- Resource subtype / Literary indicator
- Numerical Data
- Descriptors DEI
- EXPERIMENTAL DATA; FERROELECTRIC MATERIALS; INTERFACES; LEAD IONS; SOL-GEL PROCESS; SURFACES; THIN FILMS; TITANATES; X-RAY DIFFRACTION; ZIRCONATES
- Descriptors DEC
- CHARGED PARTICLES; COHERENT SCATTERING; DATA; DIELECTRIC MATERIALS; DIFFRACTION; FILMS; INFORMATION; IONS; MATERIALS; NUMERICAL DATA; OXYGEN COMPOUNDS; SCATTERING; TITANIUM COMPOUNDS; TRANSITION ELEMENT COMPOUNDS; ZIRCONIUM COMPOUNDS
Optional Information
- Notes
- 23 refs., 6 figs., 1 tab.