Published 2011
| Version v1
Miscellaneous
Biphasic elements of submicron CMOS VLSI circuits with high resistance to individual nuclear particles' impact
Description
Author proposed methods for designing two-phase gates of submicron digital CMOS VLSI (Complementary Metal Oxide Semiconductor) with high resistance to individual nuclear particles' impact. Based on the obtained results of the investigation, the development of a two-phase element base of CMOS for highly reliable digital and microprocessor CMOS VLSI was initiated
Availability note (English)
Available from NRNU MEPHI, Russian Federation, 115409, Moscow, Kashirskoe sh., 31. E-mail: library@mephi.ruAbstract (Russian)
Предложены методы проектирования двухфазных логических элементов цифровых субмикронных КМОП СБИС (комплементарная структура металл - оксид - полупроводник) с повышенной сбоеустойчивостью к воздействию отдельных ядерных частиц. На основе полученных результатов исследований начаты разработки элементной базы двухфазной КМОП логики для высоконадежных цифровых и микропроцессорных КМОП СБИСAdditional details
Additional titles
- Original title (Russian)
- Dvukhfaznye ehlementy submikronnykh KMOP tsifrovykh SBIS s povyshennoj sboeustojchivost'yu k vozdejstviyu otdel'nykh yadernykh chastits
Publishing Information
- Imprint Pagination
- 21 p.
- Report number
- INIS-RU--572
INIS
- Country of Publication
- Russian Federation
- Country of Input or Organization
- Russian Federation
- INIS RN
- 45100126
- Subject category
- S73: NUCLEAR PHYSICS AND RADIATION PHYSICS; S99: GENERAL AND MISCELLANEOUS;
- Resource subtype / Literary indicator
- Thesis, Non-conventional Literature
- Descriptors DEI
- DATA PROCESSING; MATHEMATICAL MODELS; MICROPROCESSORS; NUCLEAR PHYSICS; SUPERCONDUCTORS
- Descriptors DEC
- ELECTRONIC CIRCUITS; MICROELECTRONIC CIRCUITS; PHYSICS; PROCESSING
Optional Information
- Notes
- 17 figs., 6 tabs.