Transient-current technique characterization of diamond detector and proposal of a diamond detector with charge amplification
- 1. Research Center for Quantum Physics, National Research and Innovation Agency (BRIN), Tangerang, Selatan, 15314 (Indonesia)
- 2. Wide Bandgap Semiconductors Group, National Institute for Materials Science (NIMS), Tsukuba, Ibaraki, 305-0044 (Japan)
- 3. Department of Particle and Nuclear Physics, The Graduate University for Advanced Studies (SOKENDAI), Miura, Kanagawa, 240-0115 (Japan)
- 4. Institute of Particle and Nuclear Studies, High Energy Accelerator Research Organization (KEK), Tsukuba, Ibaraki, 305-0801 (Japan)
Description
Diamond holds promise as a potential candidate for future particle detectors owing to its remarkable electronic, mechanical, and thermal properties. However, a notable limitation is the need for a comprehensive model characterizing intrinsic diamond detectors. To address this, a specialized model integrated into the technology computer-aided design simulation program is developed. The model's validation is accomplished through its application to the evaluation of an intrinsic diamond detector. Our investigation emphasizes three key attributes: charge carrier mobility, charge carrier lifetime, and the effective charge density within the bulk material. These attributes are carefully assessed using the transient current technique. Furthermore, our model serves as a valuable tool in the analysis of the quality of an high-pressure high-temperature diamond crystal and in the optimization of a diamond detector's design, exploiting the charge multiplication effect. This comprehensive methodology advances our grasp of diamond detector behavior and facilitates the development of even more sophisticated devices. (© 2023 Wiley‐VCH GmbH)
Additional details
Identifiers
Publishing Information
- Journal Title
- Physica Status Solidi. A, Applications and Materials Science (Online)
- Journal Volume
- 221
- Journal Issue
- 4
- Journal Page Range
- p. 1-10
- ISSN
- 1862-6319
- CODEN
- PSSABA
INIS
- Country of Publication
- Germany
- Country of Input or Organization
- Germany
- INIS RN
- 55045184
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ALPHA PARTICLES; AMPLIFICATION; CARRIER LIFETIME; CARRIER MOBILITY; CHARGE DENSITY; COMPUTER-AIDED DESIGN; COMPUTERIZED SIMULATION; DIAMONDS; EFFECTIVE CHARGE; ELECTRIC CONDUCTIVITY; MIM JUNCTIONS; NUMERICAL ANALYSIS; RADIATION DETECTORS; THERMODYNAMIC PROPERTIES; TIME DEPENDENCE; VALIDATION
- Descriptors DEC
- CARBON; CHARGED PARTICLES; DESIGN; ELECTRICAL PROPERTIES; ELEMENTS; IONIZING RADIATIONS; LIFETIME; MATHEMATICS; MEASURING INSTRUMENTS; MINERALS; MOBILITY; NONMETALS; PHYSICAL PROPERTIES; RADIATIONS; SEMICONDUCTOR JUNCTIONS; SIMULATION; TESTING; TUNNEL JUNCTIONS
Optional Information
- Notes
- AID: 2300673