Space charge-limited conduction in Ag/p-Si Schottky diode

The space charge-limited conduction mechanism in Ag/p-Si Schottky diode was investigated at range of 175-275K temperatures and detail information about low-temperature conduction mechanism of the Schottky diode could be obtained. Current-voltage characteristics and the power-law dependence was found to be governed by space charge-limited currents. In this conduction mechanism, the current increases superlinearly in the diode , i.e, I∝Vm. The I-V curves in the reverse direction at different temperatures are taken and interpreted via both Schottky and Poole-Frenkel effects. Poole-Frenkel effect was found to be dominant in the reverse direction. The density of localized states was determined, as well through the SCLC theory