Modeling of a submicrometer gate field-effect transistor including effects of nonstationary electron dynamics

A simple self-consistent model is described, which takes into account nonstationary electron-dynamic effects and gate-edge effects in submicrometer gate FET devices. Analytical formulations are used to describe nonstationary electron dynamics, which are derived by fitting steady-state results of Monte Carlo calculations. The first results show a significant improvement in the transconductance g/sub m/ as well as in the cutoff frequency for submicrometer devices. A first attempt to optimize the impurity concentration level is made which shows that a compromise can be found for present-day feasible submicrometer gate devices