Stress generation during anisotropic lithiation in silicon nanopillar electrodes: A reactive force field study
Creators
- 1. Department of Mechanical Engineering, University of Nevada, Reno, Reno, NV 89557 (United States)
- 2. Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)
- 3. Department of Mechanics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
- 4. Nevada Institute for Sustainability, University of Nevada, Reno, Reno, NV 89557 (United States)
Description
Highlights: • The approach incorporates the anisotropic migration of a sharp phase boundary. • The simulations capture prominent features of the two-phase anisotropic lithiation. • This work explains the geometric effect of the phase boundary on stress generation. -- Abstract: Models that are developed to investigate lithiation-induced stress in high-volume-change electrodes are often based on continuum approaches with simplifying assumptions. In this work, we investigate stress generation during the first lithiation of crystalline silicon electrodes solely using atomistic simulations with chemo-mechanical fidelity. We use a 〈100〉-oriented silicon nanopillar as a model system and perform molecular statics simulations with a reactive force field. The simulation approach incorporates the key physical feature of the lithiation – anisotropic formation and migration of an atomistically-sharp phase boundary. The resulting stress fields show the development of hoop tension near the nanopillar surface, which drives surface fracture at angular sites between two adjacent {110} facets. This work links the atomic-level physics of the lithiation directly with the stress generation and accounts for the geometric effect of the sharp phase boundary.
Additional details
Identifiers
- DOI
- 10.1016/j.physleta.2019.125955;
- PII
- S0375960119308060;
Publishing Information
- Journal Title
- Physics Letters. A
- Journal Volume
- 383
- Journal Issue
- 33
- Journal Page Range
- vp.
- ISSN
- 0375-9601
- CODEN
- PYLAAG
INIS
- Country of Publication
- Netherlands
- Country of Input or Organization
- International Atomic Energy Agency (IAEA)
- INIS RN
- 55008329
- Subject category
- S36: MATERIALS SCIENCE;
- Descriptors DEI
- ANISOTROPY; COMPUTERIZED SIMULATION; ELECTRODES; FRACTURES; GEOMETRY; SILICON; SURFACES
- Descriptors DEC
- ELEMENTS; FAILURES; MATHEMATICS; SEMIMETALS; SIMULATION
Optional Information
- Copyright
- Copyright (c) 2019 Elsevier B.V. All rights reserved.