Published November 2019 | Version v1
Journal article

Stress generation during anisotropic lithiation in silicon nanopillar electrodes: A reactive force field study

  • 1. Department of Mechanical Engineering, University of Nevada, Reno, Reno, NV 89557 (United States)
  • 2. Hubei Key Laboratory of Engineering Structural Analysis and Safety Assessment, 1037 Luoyu Road, Wuhan, Hubei 430074 (China)
  • 3. Department of Mechanics, Huazhong University of Science and Technology, Wuhan, Hubei 430074 (China)
  • 4. Nevada Institute for Sustainability, University of Nevada, Reno, Reno, NV 89557 (United States)

Description

Highlights: • The approach incorporates the anisotropic migration of a sharp phase boundary. • The simulations capture prominent features of the two-phase anisotropic lithiation. • This work explains the geometric effect of the phase boundary on stress generation. -- Abstract: Models that are developed to investigate lithiation-induced stress in high-volume-change electrodes are often based on continuum approaches with simplifying assumptions. In this work, we investigate stress generation during the first lithiation of crystalline silicon electrodes solely using atomistic simulations with chemo-mechanical fidelity. We use a 〈100〉-oriented silicon nanopillar as a model system and perform molecular statics simulations with a reactive force field. The simulation approach incorporates the key physical feature of the lithiation – anisotropic formation and migration of an atomistically-sharp phase boundary. The resulting stress fields show the development of hoop tension near the nanopillar surface, which drives surface fracture at angular sites between two adjacent {110} facets. This work links the atomic-level physics of the lithiation directly with the stress generation and accounts for the geometric effect of the sharp phase boundary.

Additional details

Identifiers

DOI
10.1016/j.physleta.2019.125955;
PII
S0375960119308060;

Publishing Information

Journal Title
Physics Letters. A
Journal Volume
383
Journal Issue
33
Journal Page Range
vp.
ISSN
0375-9601
CODEN
PYLAAG

INIS

Country of Publication
Netherlands
Country of Input or Organization
International Atomic Energy Agency (IAEA)
INIS RN
55008329
Subject category
S36: MATERIALS SCIENCE;
Descriptors DEI
ANISOTROPY; COMPUTERIZED SIMULATION; ELECTRODES; FRACTURES; GEOMETRY; SILICON; SURFACES
Descriptors DEC
ELEMENTS; FAILURES; MATHEMATICS; SEMIMETALS; SIMULATION

Optional Information

Copyright
Copyright (c) 2019 Elsevier B.V. All rights reserved.