Acoustostimulated change of electron mobility in n-CdxHg1-xTe crystals

Electron mobility of n-CdxHg1-xTe crystals is investigated at a dynamic ultrasound loading. A mobility increases in the region of impurity conductivity (T < 120 K) - the biggest effect had displayed in nonuniform crystals - and a mobility decrease in the region of intrinsic conductivity (T > 120 K) for all measured samples are observed. It is demonstrated that the main reason for the mobility increase in the region of impurity conductivity is down sizing of the macropotential in the crystal, and an increase of the scattering intensity on optical phonons results in a decrease of carrier's mobility in the region of intrinsic conductivity